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M29W160EB

16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W160E is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件:665.25 Kbytes 页数:40 Pages

STMICROELECTRONICS

意法半导体

M29W160EB70N6

16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W160E is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件:665.25 Kbytes 页数:40 Pages

STMICROELECTRONICS

意法半导体

M29W160EB70N6E

16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W160E is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件:665.25 Kbytes 页数:40 Pages

STMICROELECTRONICS

意法半导体

M29W160EB70N6F

16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W160E is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件:665.25 Kbytes 页数:40 Pages

STMICROELECTRONICS

意法半导体

M29W160EB70N6T

16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W160E is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件:665.25 Kbytes 页数:40 Pages

STMICROELECTRONICS

意法半导体

M29W160EB70ZA6

16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W160E is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件:665.25 Kbytes 页数:40 Pages

STMICROELECTRONICS

意法半导体

M29W160EB70ZA6E

16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W160E is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件:665.25 Kbytes 页数:40 Pages

STMICROELECTRONICS

意法半导体

M29W160EB70ZA6F

16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W160E is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件:665.25 Kbytes 页数:40 Pages

STMICROELECTRONICS

意法半导体

M29W160EB70ZA6T

16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W160E is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件:665.25 Kbytes 页数:40 Pages

STMICROELECTRONICS

意法半导体

M29W160EB90N6

16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W160E is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same w

文件:665.25 Kbytes 页数:40 Pages

STMICROELECTRONICS

意法半导体

技术参数

  • 存储器格式:

    闪存

  • 技术:

    FLASH - NOR

  • 存储容量:

    16Mb (2M x 8,1M x 16)

  • 写周期时间 - 字,页:

    70ns

  • 访问时间:

    70ns

  • 存储器接口:

    并联

  • 电压 - 电源:

    2.7V ~ 3.6V

  • 工作温度:

    0°C ~ 70°C(TA)

  • 安装类型:

    表面贴装

  • 封装/外壳:

    48-TFSOP(0.724\,18.40mm 宽)

  • 供应商器件封装:

    48-TSOP

供应商型号品牌批号封装库存备注价格
ST
16+
NA
8800
原装现货,货真价优
询价
ST
24+
TSSOP
5000
全现原装公司现货
询价
ST
BGA
400
询价
ST/意法
23+
TSOP48
50000
全新原装正品现货,支持订货
询价
ST
23+
TSOP
50000
全新原装正品现货,支持订货
询价
ST/意法
23+
TSSOP
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ST
12+
TSOP
11
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ST/意法
23+
TSSOP
89630
当天发货全新原装现货
询价
ST/意法
24+
NA/
3926
原装现货,当天可交货,原型号开票
询价
MAXIC
23+24
SOT
27960
原装现货.优势热卖.终端BOM表可配单
询价
更多M29W160E供应商 更新时间2025-12-24 10:01:00