Flexible single and multiple outputs

The LX550 family offers 550 Watts of continuous output power in a low profile industry standard footprint. Cover and fan assembly and over temperature protection are fitted as standard. With two standard single output options, and a flexible standard multiple output, the series can address most po

文件：51.2 Kbytes 页数：4 Pages

ARTESYN

550 Watt AC/DC universal input switch mode power supplies

The LX550 family offers 550 Watts of continuous output power in a low profile industry standard footprint. Cover and fan assembly and over temperature protection are fitted as standard. With two standard single output options, and a flexible standard multiple output, the series can address most powe

Artesyn

雅特生

包装：散装 类别：计算机设备 配件 描述：VERTICAL NOTEBOOK RISER BLACK LX

3M

包装：散装 类别：计算机设备 配件 描述：VERTICAL NOTEBOOK RISER BLACK LX

3M

InGAP HBT Gain Block

This general-purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Hetero junction Bipolar Transistor (HBT) process (MOCVD). Designed as an easily cascadable 50-ohm internally matched gain block, the LX5501A can be used for IF and RF amplification in wireless / wired v

文件：158.4 Kbytes 页数：7 Pages

MICROSEMI

美高森美

InGAP HBT Gain Block

This general-purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Hetero junction Bipolar Transistor (HBT) process (MOCVD). Designed as an easily cascadable 50-ohm internally matched gain block, the LX5501A can be used for IF and RF amplification in wireless / wired v

文件：158.4 Kbytes 页数：7 Pages

MICROSEMI

美高森美

InGAP HBT Gain Block TM

The LX5501B is a low cost, broadband RFIC amplifier that has been manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). Designed as an easily cascadable 50-ohm internally matched gain block, the LX5501B can be used for IF and RF amplification in wireless / wired

文件：149.47 Kbytes 页数：6 Pages

MICROSEMI

美高森美

InGAP HBT Gain Block TM

The LX5501B is a low cost, broadband RFIC amplifier that has been manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). Designed as an easily cascadable 50-ohm internally matched gain block, the LX5501B can be used for IF and RF amplification in wireless / wired

文件：149.47 Kbytes 页数：6 Pages

MICROSEMI

美高森美

InGaP HBT 5-6GHz Power Amplifier

The LX5503 is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band and HiperLAN2 applications in the 5.15-5.85GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output

文件：473.93 Kbytes 页数：13 Pages

MICROSEMI

美高森美

InGaP HBT 4 - 6GHz Power Amplifier

The LX5503E is a power amplifier optimized for high-efficiency low power applications in the FCC Unlicensed National Information Infrastructure (U-NII) band, Europe HyperLAN2, and Japan WLAN in the 4.9-5.85GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated ci

文件：239.71 Kbytes 页数：9 Pages

MICROSEMI

美高森美