InGAP HBT Gain Block

This general-purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Hetero junction Bipolar Transistor (HBT) process (MOCVD). Designed as an easily cascadable 50-ohm internally matched gain block, the LX5501A can be used for IF and RF amplification in wireless / wired v

文件：158.4 Kbytes 页数：7 Pages

Microsemi

美高森美

WLAN Power Amplifiers (PA)

Key Features: Advanced InGaP HBT DC to 6 GHz Operation Single Supply Low Idle Current (10 - 35 mA) Small Signal Gain ~ 11 dB at 6 GHz P1dB ~ 11 dBm at 6 GHz SOT-23 Package Please See Datasheet for further details.

Microchip

微芯科技

InGAP HBT Gain Block TM

The LX5501B is a low cost, broadband RFIC amplifier that has been manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). Designed as an easily cascadable 50-ohm internally matched gain block, the LX5501B can be used for IF and RF amplification in wireless / wired

文件：149.47 Kbytes 页数：6 Pages

Microsemi

美高森美

InGAP HBT Gain Block TM

The LX5501B is a low cost, broadband RFIC amplifier that has been manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). Designed as an easily cascadable 50-ohm internally matched gain block, the LX5501B can be used for IF and RF amplification in wireless / wired

文件：149.47 Kbytes 页数：6 Pages

Microsemi

美高森美

Low-Power, Quad, 12-Bit Voltage-Output DACs with Serial Interface

General Description The MAX5500/MAX5501 integrate four low-power, 12-bit digital-to analog converters (DACs) and four precision output amplifiers in a small, 20-pin package. Each negative input of the four precision amplifiers is externally accessible providing flexibility in gain configurations,

文件：219.08 Kbytes 页数：14 Pages

Maxim

美信