InGaP HBT 2.4 - 2.5 GHz Power Amplifier

DESCRIPTION The LX5518 is a high gain and high power amplifier optimized for 802.11b/g/n applications in the 2.4-2.5GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, on-chip input matching, and output pre-matching.

文件：114.62 Kbytes 页数：2 Pages

Microsemi

美高森美

Package：16-QFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC RF AMP 802.11B/G/N 2.4GHZ

Microchip

微芯科技

Low Voltage Surface Mount 500 mW Avalanche Diodes

• 1N5518BUR-1 THRU 1N5546BUR-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • ZENER DIODE, 500mW • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW REVERSE LEAKAGE CHARACTERISTICS • METALLURGICALLY BONDED

文件：333.31 Kbytes 页数：3 Pages

Microsemi

美高森美

30V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：485.74 Kbytes 页数：6 Pages

PANJIT

強茂

Metal Can TO56 Green Laser Diode in TO56 Package

Features - Optical output power (continuous wave): 30 mW (TC = 25°C) - Typical emission wavelength: 520 nm - Efficient radiation source for cw and pulsed operation - Single mode semiconductor laser - High modulation bandwidth - TO56 package with photo diode 

文件：2.13854 Mbytes 页数：18 Pages

OSRAM

艾迈斯欧司朗