LT4953SQ-30资料datasheet下载供应价格领泰-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
LT4953SQ	文件：300 bytes Page：1 Pages	MOSFET	LEADTECK 领泰	LEADTECK
LT4953SQ-30	文件：300 bytes Page：1 Pages	MOSFET	LEADTECK 领泰	LEADTECK
ME4953	文件：1.05582 Mbytes Page：9 Pages	Dual P-Channel 30-V (D-S) MOSFET 文件：1.05582 Mbytes 页数：9 Pages	VBSEMI 微碧半导体	VBSEMI
MGF4953A	文件：205.79 Kbytes Page：5 Pages	SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. FEATURES Low noise figure @ f=12GHz MGF4953A : NFmin. = 0.40dB (Typ.) MGF49 文件：205.79 Kbytes 页数：5 Pages	Mitsubishi 三菱电机	Mitsubishi
MGF4953B	文件：119.6 Kbytes Page：5 Pages	SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. FEATURES Low noise figure @ f=20GHz NFmin. = 0.55dB (Typ.) High associated gain @ f=20GHz 文件：119.6 Kbytes 页数：5 Pages	Mitsubishi 三菱电机	Mitsubishi

更多LT4953供应商更新时间2025-12-25 9:03:00