Dual P -Channel Enhancement Power MOSFET

The LPM4953 integrates two P-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM4953 is Pb-free and Halog · Trench Technology\n· PMOS: VDS=-15V\n·RDS(ON) < 65mΩ, ID=3.6A @ VGS=-4.5V\n·RDS(ON) < 42mΩ, ID=5A @ VGS=-10V\n· Super high density cell design\n· Extremely Low Threshold Voltage\n· Small package SOP-8;

LPSemi

微源半导体

Dual 30V P-Channel PowerTrench MOSFET

文件：389.37 Kbytes 页数：6 Pages

POWER

微源半导体

Dual P-Channel 30-V (D-S) MOSFET

文件：1.05582 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)

DESCRIPTION The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. FEATURES Low noise figure @ f=12GHz MGF4953A : NFmin. = 0.40dB (Typ.) MGF49

文件：205.79 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机

SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package

DESCRIPTION The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. FEATURES Low noise figure @ f=20GHz NFmin. = 0.55dB (Typ.) High associated gain @ f=20GHz

文件：119.6 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机