GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 12 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors : λP = 900 nm (typ.) ● Good radiant power output linearity with respect to input current ● Wide di

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PANASONIC

松下

Package：径向；包装：散装 类别：光电器件 LED 发射器 - 红外，紫外，可见光 描述：EMITTER IR 900NM 100MA RADIAL

PANASONIC

松下

铝壳/瓷管电阻

Ohmite

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

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MOTOROLA

摩托罗拉

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

文件：183.2 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

N-CHANNEL BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance

文件：138.89 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉