LMG3650R035中文资料650V 35mΩ, TOLL packaged GaN FET with integrated driver, protection and zero-voltage detection数据手册TI规格书

描述 Description

The LMG365xR035 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

Adjustable gate driver strength allows the control of turn-on and maximum turn-off slew rates independently, which can be used to actively control EMI and optimize switching performance. Turn on slew rate can be varied from 10V/ns to 100V/ns, while the turn off slew rate can be limited from 10V/ns to a maximum based on the magnitude of load current. Protection features include under-voltage lockout (UVLO), cycle-by-cycle overcurrent limit, short-circuit and overtemperature protection. The LMG3651R035 provides a 5V LDO output on LDO5V pin that can be used to power external digital isolator. The LMG3656R035 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized. The LMG3657R035 includes the zero-current detection (ZCD) feature that sets the ZCD pin high when the drain-to-source current is negative and transitions to low upon detecting the zero-crossing point.

特性 Features

650V 35mΩ GaN power FET with integrated gate driver

>200V/ns FET hold-off

Adjustable slew rates for optimization of switching performance and EMI mitigation

10V/ns to 100V/ns turn-on slew rates

10V/ns to full speed turn-off slew rates



Operates with supply pin and input logic pin voltage range from 9V to 26V



Robust Protection

Cycle-by-cycle overcurrent and latched short-circuit protection with <300ns response

Withstands 720V surge while hard-switching

Self-protection from internal overtemperature and UVLO monitoring



9.8mm × 11.6mm TOLL package witht thermal pad