丝印：LMG3616NNNNC；Package：VQFN；LMG3616 650-V 270-mΩ GaN FET With Integrated Driver

1 Features • 650-V 270-mΩ GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Overtemperature protection with FLT pin reporting • AUX quiescent current: 55 μA • Maximum supply and input logic pin voltage: 26 V • 8 mm × 5.3 mm QFN pac

文件：1.17197 Mbytes 页数：28 Pages

TI

德州仪器

LMG3616 650-V 270-mΩ GaN FET With Integrated Driver

1 Features • 650-V 270-mΩ GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Overtemperature protection with FLT pin reporting • AUX quiescent current: 55 μA • Maximum supply and input logic pin voltage: 26 V • 8 mm × 5.3 mm QFN pac

文件：1.17197 Mbytes 页数：28 Pages

TI

德州仪器

6A, 4MHz Monolithic Synchronous Step-Down DC/DC Converter

文件：442.39 Kbytes 页数：28 Pages

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짹6A Monolithic Synchronous Step-Down Regulator for DDR Termination

文件：481.26 Kbytes 页数：20 Pages

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