| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印:L5109Q;Package:WSON;LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output 文件:970.51 Kbytes 页数:24 Pages | TI 德州仪器 | TI | ||
丝印:L5109Q;Package:WSON;LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output 文件:970.51 Kbytes 页数:24 Pages | TI 德州仪器 | TI | ||
丝印:L5109Q;Package:WSON;LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver 1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output 文件:970.51 Kbytes 页数:24 Pages | TI 德州仪器 | TI | ||
丝印:5109BSD;Package:WSON;LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri 文件:1.20768 Mbytes 页数:29 Pages | TI 德州仪器 | TI | ||
丝印:5109BSD;Package:WSON;LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri 文件:1.20768 Mbytes 页数:29 Pages | TI 德州仪器 | TI | ||
丝印:5109BSD;Package:WSON;LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri 文件:1.20768 Mbytes 页数:29 Pages | TI 德州仪器 | TI | ||
丝印:5109BSD;Package:WSON;LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri 文件:1.20768 Mbytes 页数:29 Pages | TI 德州仪器 | TI | ||
丝印:5109BSD;Package:WSON;LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri 文件:1.20768 Mbytes 页数:29 Pages | TI 德州仪器 | TI | ||
丝印:5109BSD;Package:WSON;LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver 1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri 文件:1.20768 Mbytes 页数:29 Pages | TI 德州仪器 | TI | ||
丝印:L5109MA;Package:SOIC;LM5109 100V/1A Peak Half Bridge Gate Driver 1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • 文件:437.29 Kbytes 页数:17 Pages | TI 德州仪器 | TI |
技术参数
- Operating temperature range (°C):
to
- Undervoltage lockout (typ) (V):
8
- Rating:
Catalog
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
23+ |
SOP-8 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
原厂正品 |
23+ |
SOP8 |
5000 |
原装正品,假一罚十 |
询价 | ||
NS |
25+ |
LLP8 |
2936 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
NS |
25+ |
SOT23 |
18000 |
原厂直接发货进口原装 |
询价 | ||
NS |
00+ |
SOP8 |
1570 |
全新原装进口自己库存优势 |
询价 | ||
NS |
24+ |
原厂封装 |
5810 |
全新原装现货热卖,价格绝对优 |
询价 | ||
NS |
SOP-8 |
3200 |
原装长期供货! |
询价 | |||
NSC |
24+ |
190 |
询价 | ||||
NS |
25+ |
SOICNARROW-8 |
3600 |
全新原装进口,公司现货! |
询价 | ||
NS |
2016+ |
SOP8 |
2500 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 |
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