LM5109 100V/1A Peak Half Bridge Gate Driver

1FEATURES 2• Drives Both a High Side and Low Side N- Channel MOSFET • 1A Peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 118V DC • Fast Propagation Times (27 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times •

文件：437.29 Kbytes 页数：17 Pages

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德州仪器

100V/1A Peak Half Bridge Gate Driver

文件：733.33 Kbytes 页数：14 Pages

TI

德州仪器

100V / 1A Peak Half Bridge Gate Driver

文件：657.32 Kbytes 页数：9 Pages

NSC

国半

100V/1A 峰值半桥栅极驱动器

The LM5109 is a low cost high voltage gate driver, designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100V. The outputs are independently controlled • Drives both a high side and low side N-Channel MOSFET\n• 1A peak output current (1.0A sink / 1.0A source)\n• Independent TTL compatible inputs\n• Bootstrap supply voltage to 118V DC\n• Fast propagation times (27 ns typical)\n• Drives 1000 pF load with 15ns rise and fall times\n• Excellent propagat;

TI

德州仪器

LM5109A High Voltage 1A Peak Half Bridge Gate Driver

1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1A peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 108V DC • Fast Propagation Times (30 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • E

文件：1.22354 Mbytes 页数：29 Pages

TI

德州仪器

丝印：L5109AMA；Package：SOIC；LM5109A High Voltage 1A Peak Half Bridge Gate Driver

1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1A peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 108V DC • Fast Propagation Times (30 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • E

文件：1.22354 Mbytes 页数：29 Pages

TI

德州仪器

丝印：L5109AMA；Package：SOIC；LM5109A High Voltage 1A Peak Half Bridge Gate Driver

1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1A peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 108V DC • Fast Propagation Times (30 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • E

文件：1.22354 Mbytes 页数：29 Pages

TI

德州仪器

丝印：L5109AMA；Package：SOIC；LM5109A High Voltage 1A Peak Half Bridge Gate Driver

1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1A peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 108V DC • Fast Propagation Times (30 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • E

文件：1.22354 Mbytes 页数：29 Pages

TI

德州仪器

丝印：L5109AMA；Package：SOIC；LM5109A High Voltage 1A Peak Half Bridge Gate Driver

1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1A peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 108V DC • Fast Propagation Times (30 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • E

文件：1.22354 Mbytes 页数：29 Pages

TI

德州仪器

丝印：L5109AMA；Package：SOIC；LM5109A High Voltage 1A Peak Half Bridge Gate Driver

1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1A peak Output Current (1.0A Sink / 1.0A Source) • Independent TTL Compatible Inputs • Bootstrap Supply Voltage to 108V DC • Fast Propagation Times (30 ns Typical) • Drives 1000 pF Load with 15ns Rise and Fall Times • E

文件：1.22354 Mbytes 页数：29 Pages

TI

德州仪器