丝印：5109BSD；Package：WSON；LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver

1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri

文件：1.20768 Mbytes 页数：29 Pages

TI

德州仪器

High Voltage 1-A Peak Half-Bridge Gate Driver

文件：1.39566 Mbytes 页数：24 Pages

TI

德州仪器

丝印：5109BSD；Package：WSON；LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver

1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri

文件：1.20768 Mbytes 页数：29 Pages

TI

德州仪器

丝印：5109BSD；Package：WSON；LM5109B High Voltage 1-A Peak Half-Bridge Gate Driver

1 Features 1• Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source) • Inputs Compatible With Independent TTL and CMOS • Bootstrap Supply Voltage to 108-V DC • Fast Propagation Times (30 ns Typical) • Drives 1000-pF Load With 15-ns Ri

文件：1.20768 Mbytes 页数：29 Pages

TI

德州仪器