丝印：L5109Q；Package：WSON；LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output

文件：970.51 Kbytes 页数：24 Pages

TI

德州仪器

丝印：L5109Q；Package：WSON；LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output

文件：970.51 Kbytes 页数：24 Pages

TI

德州仪器

丝印：L5109Q；Package：WSON；LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output

文件：970.51 Kbytes 页数：24 Pages

TI

德州仪器

丝印：L5109Q；Package：WSON；LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output

文件：970.51 Kbytes 页数：24 Pages

TI

德州仪器

丝印：L5109Q；Package：WSON；LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output

文件：970.51 Kbytes 页数：24 Pages

TI

德州仪器

丝印：L5109Q；Package：WSON；LM5109B-Q1 High Voltage 1-A Peak Half Bridge Gate Driver

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results – Device Temperature Grade 1 high– Device HBM ESD Classification Level 1C – Device CDM ESD Classification Level C4A • Drives Both a High-Side and Low-Side N-Channel MOSFET • 1-A Peak Output

文件：970.51 Kbytes 页数：24 Pages

TI

德州仪器