SMALL SIGNAL SCHOTTKY DIODES

FEATURES • Metal-on-silicon junction, majority carrier conduction • High current capability, Low forward voltage drop • Extremely low reverse current IR • Ultra speed switching characteristics • Small temperature coefficient of forward characteristics • Satisfactory Wave detection efficiency

文件：97.84 Kbytes 页数：3 Pages

JINANJINGHENG

晶恒集团

Schottky Barrier Rectifier

Features • High Reliability • Low Reverse Current and Low Forward Voltage • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1

文件：400.16 Kbytes 页数：3 Pages

MCC

MINI MELF Glass-Encapsulate Diodes

Small Signal Fast Switching Diodes Features ● High reliability ● Low reverse current and low forward voltage Applications ● Low current rectification and high speed switching

文件：1.46769 Mbytes 页数：4 Pages

HDSEMI

海德半导体

SCHOTTKY BARRIER SWITCHING DIODE

Features ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Fast Switching Time ● Low Reverse Capacitance

文件：57.28 Kbytes 页数：2 Pages

DIODES

美台半导体

SCHOTTKY BARRIER DIODES

VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diode

文件：36.52 Kbytes 页数：2 Pages

EIC

Small-Signal Diode Schottky Diodes

Features ◆ For general purpose applications ◆ Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. ◆ The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switch

文件：112.46 Kbytes 页数：2 Pages

GOOD-ARK

固锝电子

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • For general purpose applications • Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast

文件：70.37 Kbytes 页数：2 Pages

JINANJINGHENG

晶恒集团

SCHOTTKY BARRIER DIODES

VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diode

文件：31.95 Kbytes 页数：2 Pages

SYNSEMI

SMALL SIGNAL SCHOTTKY DIODES

VOLTAGE RANGE: 60 V CURRENT: 400 mW FEATURES ◇ For general purpose applications ◇ Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and co

文件：65.7 Kbytes 页数：2 Pages

BILIN

银河微电

Schottky Diodes

Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switch

文件：84.46 Kbytes 页数：2 Pages

GE