SSM6L61NU中文资料下载库存现货东芝第3页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
LL60P	文件：400.16 Kbytes Page：3 Pages	Schottky Barrier Rectifier Features • High Reliability • Low Reverse Current and Low Forward Voltage • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 文件：400.16 Kbytes 页数：3 Pages	MCC	MCC
LL60P	文件：1.46769 Mbytes Page：4 Pages	MINI MELF Glass-Encapsulate Diodes Small Signal Fast Switching Diodes Features ● High reliability ● Low reverse current and low forward voltage Applications ● Low current rectification and high speed switching 文件：1.46769 Mbytes 页数：4 Pages	HDSEMI 海德半导体	HDSEMI
LL6263	文件：57.28 Kbytes Page：2 Pages	SCHOTTKY BARRIER SWITCHING DIODE Features ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Fast Switching Time ● Low Reverse Capacitance 文件：57.28 Kbytes 页数：2 Pages	DIODES 美台半导体	DIODES
LL6263	文件：36.52 Kbytes Page：2 Pages	SCHOTTKY BARRIER DIODES VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diode 文件：36.52 Kbytes 页数：2 Pages	EIC	EIC
LL6263	文件：112.46 Kbytes Page：2 Pages	Small-Signal Diode Schottky Diodes Features ◆ For general purpose applications ◆ Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. ◆ The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switch 文件：112.46 Kbytes 页数：2 Pages	GOOD-ARK 固锝电子	GOOD-ARK
LL6263	文件：65.7 Kbytes Page：2 Pages	SMALL SIGNAL SCHOTTKY DIODES VOLTAGE RANGE: 60 V CURRENT: 400 mW FEATURES ◇ For general purpose applications ◇ Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and co 文件：65.7 Kbytes 页数：2 Pages	BILIN 银河微电	BILIN
LL6263	文件：84.46 Kbytes Page：2 Pages	Schottky Diodes Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switch 文件：84.46 Kbytes 页数：2 Pages	GE	GE
LL6263	文件：70.37 Kbytes Page：2 Pages	SMALL SIGNAL SCHOTTKY DIODES FEATURES • For general purpose applications • Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast 文件：70.37 Kbytes 页数：2 Pages	JINANJINGHENG 晶恒集团	JINANJINGHENG
LL6263	文件：31.95 Kbytes Page：2 Pages	SCHOTTKY BARRIER DIODES VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diode 文件：31.95 Kbytes 页数：2 Pages	SYNSEMI	SYNSEMI
LL6263	文件：43.8 Kbytes Page：2 Pages	SMALL SIGNAL SCHOTTKY DIODES FEATURES • For general purpose applications • Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast 文件：43.8 Kbytes 页数：2 Pages	JINGHENG 晶恒	JINGHENG

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技术参数

Polality：
N-ch + P-ch
VDSS(V)：
20/-20
VGSS(V)：
+/-8
ID：
Q1(A)
ID：
Q2(A)
PD(W)：
1.0
Ciss：
Q1(pF)Typ.
Ciss：
Q2(pF)Typ.
Qg：
Q1(nC)Typ.
Qg：
Q2(nC)Typ.
RDS(ON)：
Q1(Ω)VGS=2.5VMax
RDS(ON)：
Q1(Ω)VGS=4.5VMax
RDS(ON)：
Q2(Ω)VGS=-2.5VMax
RDS(ON)：
Q2(Ω)VGS=-4.5VMax
RDS(ON)：
Q2(Ω)VGS=-10VMax
Number of pins：
6
Surface mount package：
Y
Package name(Toshiba)：
UDFN6
Generation：
U-MOSⅦ-H/U-MOSⅥ
Width×Length×Height(mm)：
2.0 x 2.0 x 0.75
Package Size(mm2)：
4.00
Drive voltage type：
Low Voltage Gate Drive

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市坤融电子科技有限公司	SSM6L61NU	TOSHIBA/东芝	2025+	UDFN6	5000	原装进口,免费送样品!	询价
深圳市正纳电子有限公司	SSM6L61NU	TOSHIBA(东芝)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市安富世纪电子有限公司	SSM6L61NU	原装TOSHIBA	23+	UQFN6	50000	全新原装正品现货,支持订货	询价
深圳市威尔健半导体有限公司	SSM6L61NU	TOSHIBA/东芝	23+	UQFN6	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	SSM6L61NU	TOSHIBA/东芝	25+	UQFN6	10000	原装现货假一罚十	询价
深圳市威雅利发展有限公司	SSM6L61NU	TOSHIBA	17+	6-WDFN	100000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市亿联芯电子科技有限公司	SSM6L61NU	TOSHIBA/东芝	2023+	UQFN6	34822	一级代理优势现货,全新正品直营店	询价
深圳市瑞祥辉半导体有限公司	SSM6L61NU	TOSHIBA/东芝	2308+	UQFN6	6800	十年专业专注优势渠道商正品保证公司现货	询价
深圳市中联芯电子有限公司	SSM6L61NU	TOSHIBA/东芝	24+	UQFN6	8120	全新原装正品现货假一赔十	询价
深圳市博中泰实业有限公司	SSM6L61NU	TOSHIBA/东芝	24+	UQFN6	60000		询价

更多LL6供应商更新时间2026-1-27 16:36:00

技术参数

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