Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM

Overview The LC35W1000BM and LC35W1000BTS-70U/10U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. They provide two chip enable pins (CE1 and CE2) for device select/deselect control and one output enable pin (OE) for output control. They feature high s

文件：165.88 Kbytes 页数：9 Pages

SANYO

三洋

Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM

Overview The LC35W1000BM and LC35W1000BTS-70U/10U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. They provide two chip enable pins (CE1 and CE2) for device select/deselect control and one output enable pin (OE) for output control. They feature high s

文件：165.88 Kbytes 页数：9 Pages

SANYO

三洋

Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM

Overview The LC35W1000BM and LC35W1000BTS-70U/10U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. They provide two chip enable pins (CE1 and CE2) for device select/deselect control and one output enable pin (OE) for output control. They feature high s

文件：165.88 Kbytes 页数：9 Pages

SANYO

三洋

256K (32K words x 8 bits) SRAM Control pins: OE and CE

Overview The LC35W256EM-10W and LC35W256ET-10W are asynchronous silicon-gate CMOS SRAMs with a 32768- word by 8-bit structure. Features • Supply voltage range: 2.7 to 3.6 V • Access time: 100 ns (maximum) • Standby current: 0.8 µA (Ta ≤ 60°C) 4.0 µA (Ta ≤ 70°C

文件：46.87 Kbytes 页数：6 Pages

SANYO

三洋

256K (32K words x 8 bits) SRAM Control pins: OE and CE

Overview The LC35W256EM-10W and LC35W256ET-10W are asynchronous silicon-gate CMOS SRAMs with a 32768- word by 8-bit structure. Features • Supply voltage range: 2.7 to 3.6 V • Access time: 100 ns (maximum) • Standby current: 0.8 µA (Ta ≤ 60°C) 4.0 µA (Ta ≤ 70°C

文件：46.87 Kbytes 页数：6 Pages

SANYO

三洋

256K (32K words x 8 bits) SRAM Control pins: OE and CE

Overview The LC35W256EM-10W and LC35W256ET-10W are asynchronous silicon-gate CMOS SRAMs with a 32768- word by 8-bit structure. Features • Supply voltage range: 2.7 to 3.6 V • Access time: 100 ns (maximum) • Standby current: 0.8 µA (Ta ≤ 60°C) 4.0 µA (Ta ≤ 70°C

文件：46.87 Kbytes 页数：6 Pages

SANYO

三洋

1500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR

DESCRIPTION This hermetically sealed Transient Voltage Suppressor (TVS) product family includes a rectifier diode element in series and opposite direction to achieve low capacitance performance below 100 pF (see Figure 2). The low level of TVS capacitance may be used for protecting higher frequen

文件：586.9 Kbytes 页数：4 Pages

Microsemi

美高森美

TRANSIENT ABSORPTION ZENER

文件：79.43 Kbytes 页数：2 Pages

Microsemi

美高森美

GREEN OVAL LAMP LED

GREEN OVAL LAMP LED

文件：390.38 Kbytes 页数：12 Pages

SEOUL

首尔半导体

INFRARED LAMP LED

文件：376.49 Kbytes 页数：14 Pages

SEOUL

首尔半导体