256K (32K words x 8 bits) SRAM Control pins: OE and CE

Overview The LC35W256EM-10W and LC35W256ET-10W are asynchronous silicon-gate CMOS SRAMs with a 32768- word by 8-bit structure. Features • Supply voltage range: 2.7 to 3.6 V • Access time: 100 ns (maximum) • Standby current: 0.8 µA (Ta ≤ 60°C) 4.0 µA (Ta ≤ 70°C

文件：46.87 Kbytes 页数：6 Pages

SANYO

三洋

256K (32K words x 8 bits) SRAM Control pins: OE and CE

Overview The LC35W256EM-10W and LC35W256ET-10W are asynchronous silicon-gate CMOS SRAMs with a 32768- word by 8-bit structure. Features • Supply voltage range: 2.7 to 3.6 V • Access time: 100 ns (maximum) • Standby current: 0.8 µA (Ta ≤ 60°C) 4.0 µA (Ta ≤ 70°C

文件：46.87 Kbytes 页数：6 Pages

SANYO

三洋

QFP48

LATTICE

莱迪思

上传：深圳市宏世佳电子科技有限公司

TQFP48

LATTICE/莱迪斯

上传：深圳市晨豪科技有限公司

44-TQFP

LATTICE

莱迪思

上传：深圳市宏捷佳电子科技有限公司