64K (8192 words x 8 bits) SRAM?

64 K (8192 words x 8 bit) SRAM

文件：239.01 Kbytes 页数：10 Pages

SANYO

三洋

64K (8192 words x 8 bits) SRAM?

64 K (8192 words x 8 bit) SRAM

文件：239.01 Kbytes 页数：10 Pages

SANYO

三洋

64K (8192 words x 8 bits) SRAM?

64 K (8192 words x 8 bit) SRAM

文件：239.01 Kbytes 页数：10 Pages

SANYO

三洋

64K (8192 words x 8 bits) SRAM?

64 K (8192 words x 8 bit) SRAM

文件：239.01 Kbytes 页数：10 Pages

SANYO

三洋

64K (8192 words x 8 bits) SRAM?

64 K (8192 words x 8 bit) SRAM

文件：239.01 Kbytes 页数：10 Pages

SANYO

三洋

Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM

Overview The LC35V1000BM and LC35V1000BTS-70U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. They provide two chip enable pins (CE1 and CE2) for device select/deselect control and one output enable pin (OE) for output control. They feature high speed

文件：178.32 Kbytes 页数：9 Pages

SANYO

三洋

Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM

Overview The LC35V1000BM and LC35V1000BTS-70U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. They provide two chip enable pins (CE1 and CE2) for device select/deselect control and one output enable pin (OE) for output control. They feature high speed

文件：178.32 Kbytes 页数：9 Pages

SANYO

三洋

256K (32K words x 8 bits) SRAM Control pins: OE and CE

Overview The LC35V256EM-70W and LC35V256ET-70W are asynchronous silicon-gate CMOS SRAMs with a 32768- word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature ultralowvoltage operation, a low operating current drain, and an ultralow standby current. Con

文件：46.87 Kbytes 页数：6 Pages

SANYO

三洋

256K (32K words x 8 bits) SRAM Control pins: OE and CE

Overview The LC35V256EM-70W and LC35V256ET-70W are asynchronous silicon-gate CMOS SRAMs with a 32768- word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature ultralowvoltage operation, a low operating current drain, and an ultralow standby current. Con

文件：46.87 Kbytes 页数：6 Pages

SANYO

三洋

256K (32K words x 8 bits) SRAM Control pins: OE and CE

Overview The LC35V256EM-70W and LC35V256ET-70W are asynchronous silicon-gate CMOS SRAMs with a 32768- word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature ultralowvoltage operation, a low operating current drain, and an ultralow standby current. Con

文件：46.87 Kbytes 页数：6 Pages

SANYO

三洋