LC35V256EM技术资料参数贸易商三洋SANYO-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
LC35V256EM	文件：46.87 Kbytes Page：6 Pages	256K (32K words x 8 bits) SRAM Control pins: OE and CE Overview The LC35V256EM-70W and LC35V256ET-70W are asynchronous silicon-gate CMOS SRAMs with a 32768- word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature ultralowvoltage operation, a low operating current drain, and an ultralow standby current. Con 文件：46.87 Kbytes 页数：6 Pages	SANYO 三洋	SANYO
LC35V256EM-70W	文件：46.87 Kbytes Page：6 Pages	256K (32K words x 8 bits) SRAM Control pins: OE and CE Overview The LC35V256EM-70W and LC35V256ET-70W are asynchronous silicon-gate CMOS SRAMs with a 32768- word by 8-bit structure. These are full-CMOS devices with 6 transistors per memory cell, and feature ultralowvoltage operation, a low operating current drain, and an ultralow standby current. Con 文件：46.87 Kbytes 页数：6 Pages	SANYO 三洋	SANYO
LC35V256EM	文件：300 bytes Page：1 Pages	256K (32K words x 8 bits) SRAM Control pins: OE and CE	ONSEMI 安森美半导体	ONSEMI
LC4032V75T44-10I	文件：0 bytes Page：0 Pages	LATTICE QFP48	Lattice 莱迪思上传：深圳市宏世佳电子科技有限公司	Lattice
LC4032V-75TN-10I	文件：0 bytes Page：0 Pages	LATTICE/莱迪斯 TQFP48	LATTICE/莱迪斯上传：深圳市晨豪科技有限公司	LATTICE/莱迪斯

更多LC35V256EM供应商更新时间2025-10-8 11:02:00