Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM

Overview The LC35W1000BM and LC35W1000BTS-70U/10U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. They provide two chip enable pins (CE1 and CE2) for device select/deselect control and one output enable pin (OE) for output control. They feature high s

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SANYO

三洋

Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM

ONSEMI

安森美半导体

QFP48

Lattice

莱迪思

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TQFP48

LATTICE/莱迪斯

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44-TQFP

Lattice

莱迪思

上传：深圳市宏捷佳电子科技有限公司