EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • A super-minimold package houses 2 transistor. • Excellent temperature response between these 2 transistor. • High pairing property in hFE. • The follwing characteristics are common for Q1, Q2.

文件：78.1 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

EPITAXIAL PLANAR NPN TRANSISTOR

文件：700.05 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Complex General Purpose Transistor, TES6, 50V, 0.15A

• A super-minimold package houses 2 transistor\n• Simplify circuit design\n• Excellent temperature response between these 2 transistor\n• High pairing property in hFE;

KEC

开益禧

3-1/2 DIGIT A/D CONVERTER WITH HOLD AND DIFFERENTIAL REFERENCE INPUTS

文件：171.85 Kbytes 页数：12 Pages

TELCOM

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD

The µPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • High Gain |S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • A Small Mini Mold

文件：49.15 Kbytes 页数：6 Pages

NEC

瑞萨

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD

The µPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • High Gain |S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • A Small Mini Mold

文件：49.15 Kbytes 页数：6 Pages

NEC

瑞萨