Super Junction MOSFETs, TO-220ISW, 600V, 11A

• Fast switching time\n• Suitable for using switching mode power supplies.;

KEC

开益禧

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

文件：123.51 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

SHORT CIRCUIT RATED LOW ON-VOLTAGE

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

文件：120.21 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

SHORT CIRCUIT RATED LOW ON-VOLTAGE

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block

文件：145.87 Kbytes 页数：6 Pages

ONSEMI

安森美半导体