KHB2D0N60P

N CHANNEL MOS FIELD EFFECT TRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES VDSS=600V,ID=2.0A Drain-SourceONRe

KHB2D0N60P

N CHANNEL MOS FIELD EFFECT TRANSISTOR; VDSS= 600V, ID= 2.0A\nDrain-Source ON Resistance :\nRDS(ON)=5.0Ω@VGS= 10V\nQg(typ.) = 10.9nC;

General Description\nThis planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies.FEATURES\nVDSS= 600V, ID= 2.0A\nDrain-Source ON Resistance :\nRDS(ON)=5.0Ω@VGS= 10V\nQg(typ.) = 10.9nC

2D0N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES VDSS=600V,ID=2.0A Drain-SourceONRe

2D0N60P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES VDSS=600V,ID=2.0A Drain-SourceONRe

KHB2D0N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES VDSS=600V,ID=2.0A Drain-SourceONRe

KMB2D0N60SA

N-ChTrenchMOSFET

KMB2D0N60SA

N-ChTrenchMOSFET

ThisTrenchMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristiscs.ItismainlysuitableforportableforportableequipmentandSMPS.