KHB5D0N50F

N CHANNEL MOS FIELD EFFECT TRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES •VDSS=500V,ID=5.0A •

KHB5D0N50F2

N CHANNEL MOS FIELD EFFECT TRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES •VDSS=500V,ID=5.0A •

KHB5D0N50F2

N CHANNEL MOS FIELD EFFECT TRANSISTOR; VDSS= 500V, ID= 5.0A\nDrain-Source ON Resistance : RDS(ON)=1.5 @VGS= 10V\nQg(typ.) = 21nC;

General Description\nThis planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.\n\nFEATURES\nVDSS= 500V, ID= 5.0A\nDrain-Source ON Resistance : RDS(ON)=1.5 @VGS= 10V\nQg(typ.) = 21nC

KHB5D0N50P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES •VDSS=500V,ID=5.0A •