N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS= 500V, ID= 5.0A •

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KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description\nThis planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.\n\nFEATURES\nVDSS= 500V, ID= 5.0A\nDrain VDSS= 500V, ID= 5.0A\nDrain-Source ON Resistance : RDS(ON)=1.5 @VGS= 10V\nQg(typ.) = 21nC;

KEC

SAMSUNG/三星
原装

SAMSUNG/三星

上传：中天科工半导体（深圳）有限公司

KINGHELM金航标
DIP

KINGHELM金航标

上传：深圳市科恒伟业电子有限公司