N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies. FEATURES • VDSS=200V, ID=9.5A • Drain-

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KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description\nThis planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies.FEATURES\n• VDSS=200V, ID=9.5A\n• Drain-Sour • VDSS=200V, ID=9.5A\n• Drain-Source ON Resistance\n   : RDS(ON)=400m @VGS = 10V\n• Qg(typ.)=18.5nC ;

KEC

开益禧

原装

SAMSUNG/三星

上传：中天科工半导体（深圳）有限公司

DIP

KINGHELM金航标

上传：深圳市科恒伟业电子有限公司