N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS(Min.)= 500V, ID= 9A

文件：449.76 Kbytes 页数：7 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

N CHANNEL MOS FIELD EFFECT TRANSISTOR

文件：500.47 Kbytes 页数：7 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description\nThis planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.FEATURES\nVDSS(Min.)= 500V, ID= 9A\nDrain VDSS(Min.)= 500V, ID= 9A\nDrain-Source ON Resistance :\n  RDS(ON)=0.8  @VGS=10V\nQg(typ.) =34.6nC;

KEC

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N CHANNEL MOS FIELD EFFECT TRANSISTOR

文件：500.47 Kbytes 页数：7 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司