KHB6D0N40P数据表ic资料行情报价KECKEC-114ic电子网

首页 >KHB6D0N40P>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
KHB6D0N40P	文件：449.77 Kbytes Page：7 Pages	N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS=400V, ID=6.0A • Dra 文件：449.77 Kbytes 页数：7 Pages	KEC KEC(Korea Electronics)	KEC
KHB6D0N40P	文件：500.57 Kbytes Page：7 Pages	N CHANNEL MOS FIELD EFFECT TRANSISTOR 文件：500.57 Kbytes 页数：7 Pages	KEC KEC(Korea Electronics)	KEC
KHB6D0N40P_07	文件：500.57 Kbytes Page：7 Pages	N CHANNEL MOS FIELD EFFECT TRANSISTOR 文件：500.57 Kbytes 页数：7 Pages	KEC KEC(Korea Electronics)	KEC
KHB6D0N40F	文件：449.77 Kbytes Page：7 Pages	N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS=400V, ID=6.0A • Dra 文件：449.77 Kbytes 页数：7 Pages	KEC KEC(Korea Electronics)	KEC
KHB6D0N40F	文件：500.57 Kbytes Page：7 Pages	N CHANNEL MOS FIELD EFFECT TRANSISTOR 文件：500.57 Kbytes 页数：7 Pages	KEC KEC(Korea Electronics)	KEC

更多KHB6D0N40P供应商更新时间2025-12-8 9:50:00