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型号	下载订购	功能描述	制造商上传企业	LOGO
KHB4D0N65F	文件：397.58 Kbytes Page：7 Pages	N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies. FEATURES • VDSS=650V, ID=4A • Drain-Source ON Resistance 文件：397.58 Kbytes 页数：7 Pages	KEC KEC(Korea Electronics)	KEC
KHB4D0N65F	文件：300 bytes Page：1 Pages	N CHANNEL MOS FIELD EFFECT TRANSISTOR	KEC	KEC
KHB4D0N65P	文件：397.58 Kbytes Page：7 Pages	N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies. FEATURES • VDSS=650V, ID=4A • Drain-Source ON Resistance 文件：397.58 Kbytes 页数：7 Pages	KEC KEC(Korea Electronics)	KEC
KHB4D5N60F	文件：0 bytes Page：0 Pages	TO-220F	KEC KEC(Korea Electronics) 上传：深圳市勤思达科技有限公司	KEC
KHBAC4A03C-MC1HT	文件：0 bytes Page：0 Pages	原装	SAMSUNG/三星上传：中天科工半导体（深圳）有限公司	SAMSUNG/三星

更多KHB4D0N65F供应商更新时间2025-12-12 15:01:00