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FQT4N20L

200VLOGICN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQT4N20LTF

N-ChannelQFET짰MOSFET200V,0.85A,1.40廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQT4N20LTF-TP

N-ChannelEnhancementModePowerMOSFET

GENERALFEATURES Vos=200V 'b=1.0A@Ves=10V |Roson)£1.35Q@Ves=10V |SOT-223package.

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟電子台舟電子股份有限公司

FQU4N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.0A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQU4N20

200VN-ChannelMOSFET

Features •3.0A,200V,RDS(on)=1.4Ω(Max.)@VGS=10V •Lowgatecharge(Typ.5.0nC) •LowCrss(Typ.5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU4N20L

200VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU4N20L

200VLOGICN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FQU4N20L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.2A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.35Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

KF4N20LD

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES •VDSS(Min.)=200V,ID=3.6A •D

KECKEC CORPORATION

KEC株式会社

KF4N20LD

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES •VDSS(Min.)=200V,ID=3.6A •D

KECKEC CORPORATION

KEC株式会社

KF4N20LD/I

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES •VDSS(Min.)=200V,ID=3.6A •D

KECKEC CORPORATION

KEC株式会社

KF4N20LDI

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES •VDSS(Min.)=200V,ID=3.6A •D

KECKEC CORPORATION

KEC株式会社

KF4N20LI

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES •VDSS(Min.)=200V,ID=3.6A •D

KECKEC CORPORATION

KEC株式会社

KF4N20LI

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES •VDSS(Min.)=200V,ID=3.6A •D

KECKEC CORPORATION

KEC株式会社

KF4N20LW

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES •VDSS(Min.)=200V,ID=1A •Dra

KECKEC CORPORATION

KEC株式会社

KSMD4N20

200VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU4N20

200VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MDD4N20Y

N-ChannelMOSFET200V,3.0A,1.35(ohm)

MGCHIP

MagnaChip Semiconductor.

MDD4N20YRH

N-ChannelMOSFET200V,3.0A,1.35(ohm)

MGCHIP

MagnaChip Semiconductor.

MDD4N20YRH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
KEC
2022+
SOT223
8000
原厂授权代理 价格绝对优势
询价
KEC
22+
SOT223
8550
只做原装正品假一赔十!正规渠道订货!
询价
KEC
1833+
SOT2223
206
原装现货!天天特价!随时可以货!
询价
KEC
20+
SOT2223
32970
原装优势主营型号-可开原型号增税票
询价
KEC
23+
SOT223
90000
只做原厂渠道价格优势可提供技术支持
询价
KEC
21+
SOT223
10000
全新原装 公司现货 价格优
询价
KEC
23+
SOT223
50000
全新原装正品现货,支持订货
询价
KEC
21+
SOT223
50000
全新原装正品现货,支持订货
询价
KEC
21+
SOT2223
10000
原装现货假一罚十
询价
KEC
22+
SOT223
3255
强势库存!原装现货!
询价
更多KF4N20LW-RTK/HSD供应商 更新时间2024-5-29 14:02:00