KF4N20LW-RTK/HSD规格书应用电路原装现货-114ic电子网

首页 >KF4N20LW-RTK/HSD>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
EMDA4N20A	文件：219.33 Kbytes Page：6 Pages	N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS200V RDSON(MAX.)140mΩ ID15A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree	EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司	EXCELLIANCE
FQB4N20	文件：704.04 Kbytes Page：9 Pages	200VN-ChannelMOSFET Features •3.6A,200V,RDS(on)=1.4Ω@VGS=10V •Lowgatecharge(typical5.0nC) •LowCrss(typical5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQB4N20L	文件：517.289 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •3.8A,200V,RDS(on)=1.35Ω@VGS=10V •Lowgatecharge(typical4.0nC) •LowCrss(typical6.0pF) •Fastswit	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD4N20	文件：701.83 Kbytes Page：9 Pages	200VN-ChannelMOSFET Features •3.0A,200V,RDS(on)=1.4Ω(Max.)@VGS=10V •Lowgatecharge(Typ.5.0nC) •LowCrss(Typ.5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD4N20	文件：781.21 Kbytes Page：8 Pages	N-ChannelQFETMOSFET200V,3.0A,1.4 Features •3.0A,200V,RDS(on)=1.4Ω(Max.)@VGS=10V •Lowgatecharge(Typ.5.0nC) •LowCrss(Typ.5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD4N20	文件：304.77 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQD4N20L	文件：519.64 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD4N20L	文件：526.71 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD4N20LTF	文件：526.71 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQD4N20TF	文件：781.21 Kbytes Page：8 Pages	N-ChannelQFETMOSFET200V,3.0A,1.4 Features •3.0A,200V,RDS(on)=1.4Ω(Max.)@VGS=10V •Lowgatecharge(Typ.5.0nC) •LowCrss(Typ.5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI4N20	文件：704.04 Kbytes Page：9 Pages	200VN-ChannelMOSFET Features •3.6A,200V,RDS(on)=1.4Ω@VGS=10V •Lowgatecharge(typical5.0nC) •LowCrss(typical5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQI4N20L	文件：517.289 Kbytes Page：9 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •3.8A,200V,RDS(on)=1.35Ω@VGS=10V •Lowgatecharge(typical4.0nC) •LowCrss(typical6.0pF) •Fastswit	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP4N20	文件：506.94 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP4N20	文件：688.08 Kbytes Page：8 Pages	200VN-ChannelMOSFET Features •3.6A,200V,RDS(on)=1.4Ω@VGS=10V •Lowgatecharge(typical5.0nC) •LowCrss(typical5.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQP4N20	文件：302.19 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.6A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FQP4N20	文件：2.50977 Mbytes Page：9 Pages	N-Channel200V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
FQP4N20L	文件：506.94 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQPF4N20	文件：726 Kbytes Page：8 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •2.8A,200V,RDS(on)=1.4Ω@VGS=10V •Lowgatecharge(typical5.0nC) •LowCrss(typical5.0pF) •Fastswitching	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQPF4N20L	文件：541.4 Kbytes Page：8 Pages	200VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FQT4N20	文件：629.01 Kbytes Page：8 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市坤融电子科技有限公司	KF4N20LW-RTK/HSD	KEC	2022+	SOT223	8000	原厂授权代理价格绝对优势	询价
深圳市科恒伟业电子有限公司	KF4N20LW-RTK/HSD	KEC	22+	SOT223	8550	只做原装正品假一赔十!正规渠道订货!	询价
深圳市百视威讯电子科技有限公司	KF4N20LW-RTK/HSD		23+	N/A	59510	正品授权货源可靠	询价
深圳市芯祺盛科技有限公司	KF4N20LW-RTK/HSD	KEC	1833+	SOT2223	206	原装现货!天天特价!随时可以货!	询价
中天科工半导体（深圳）有限公司	KF4N20LW-RTK/HSD	KEC	20+	SOT2223	32970	原装优势主营型号-可开原型号增税票	询价
深圳兆威电子有限公司	KF4N20LW-RTK/HSD	KEC	23+	SOT223	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市星佑电子有限公司	KF4N20LW-RTK/HSD	KEC	21+	SOT223	10000	全新原装公司现货价格优	询价
深圳市威尔健半导体有限公司	KF4N20LW-RTK/HSD	KEC	23+	SOT223	50000	全新原装正品现货,支持订货	询价
深圳市安富世纪电子有限公司	KF4N20LW-RTK/HSD	KEC	21+	SOT223	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	KF4N20LW-RTK/HSD	KEC	21+	SOT2223	10000	原装现货假一罚十	询价

更多KF4N20LW-RTK/HSD供应商更新时间2024-5-15 15:07:00

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