isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 3A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.35Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：351.95 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET 200V, 3.0A, 1.35(ohm)

文件：810.9 Kbytes 页数：6 Pages

MGCHIP

200V N-Ch MOSFET

MagnaChip

美格纳

N-Channel MOSFET 200V, 0.85A, 1.35(ohm)

文件：925.43 Kbytes 页数：6 Pages

MGCHIP

N-Channel MOSFET 200V, 0.85A, 1.35(ohm)

文件：925.43 Kbytes 页数：6 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, p

文件：345.37 Kbytes 页数：2 Pages

ISC

无锡固电