N-Channel MOSFET 250V, 3.0A, 1.75(ohm)

文件：858.66 Kbytes 页数：6 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 3A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.75Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：351.72 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET 250V, 3.0A, 1.75(ohm)

文件：858.66 Kbytes 页数：6 Pages

MGCHIP

250V N-Ch MOSFET

MagnaChip

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