200V N-CHANNEL MOSFET

文件：1.33594 Mbytes 页数：8 Pages

KERSEMI

N-Channel MOSFET 200V, 3.0A, 1.35(ohm)

文件：810.9 Kbytes 页数：6 Pages

MGCHIP

N-Channel MOSFET 200V, 3.0A, 1.35(ohm)

文件：810.9 Kbytes 页数：6 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 3A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.35Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：351.95 Kbytes 页数：2 Pages

ISC

无锡固电