SILICON EPITAXIAL PLANAR DIODE

ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Low Forward Voltage • Fast Reverse Recovery Time • Small Total Capacitance • Ultra- Small Surface Mount Package

文件：36.23 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

SILICON EPITAXIAL PLANAR DIODE

文件：36.23 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Small Signal Switching Diode, US6, 80V, 300mA

• Low Forward Voltage \n• Fast Reverse Recovery Time\n• Ultra Small Surface Mount Package;

KEC

开益禧

Complementary Darlington Power Transistors

Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127

文件：284.04 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Germanium PNP Transistor Horizontal Output Amplifier

Germanium PNP Transistor Horizontal Output Amplifier

文件：21.1 Kbytes 页数：2 Pages

NTE

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

文件：251.64 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉