N-Channel Logic Level Enhancement Mode Field Effect Transistor

Features ● 52A, 30 V. RDS(ON) = 0.0135 Ω @ VGS = 10 V RDS(ON) = 0.020 Ω @ VGS = 4.5 V ● Low gate charge (typical 34 nC). ● Low Crss (typical 175 pF). ● Fast switching speed.

文件：58.6 Kbytes 页数：2 Pages

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N-Channel Logic Level PowerTrench MOSFET

Features ● 100 A, 30 V. RDS(ON) = 0.0045 Ω @ VGS = 10 V RDS(ON) = 0.006 Ω @ VGS = 4.5 V ● Critical DC electrical parameters specified at elevated temperature ● Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppre

文件：58.52 Kbytes 页数：2 Pages

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THINKISEMIS SCHOTTKY TYPE SINGLE PHASE BRIDGE RECTIFIERS

文件：415.68 Kbytes 页数：3 Pages

THINKISEMI

思祁半导体

THINKISEMIS SCHOTTKY TYPE SINGLE PHASE BRIDGE RECTIFIERS

文件：415.68 Kbytes 页数：3 Pages

THINKISEMI

思祁半导体

THINKISEMIS SCHOTTKY TYPE SINGLE PHASE BRIDGE RECTIFIERS

文件：415.68 Kbytes 页数：3 Pages

THINKISEMI

思祁半导体

THINKISEMIS SCHOTTKY TYPE SINGLE PHASE BRIDGE RECTIFIERS

文件：415.68 Kbytes 页数：3 Pages

THINKISEMI

思祁半导体

THINKISEMIS SCHOTTKY TYPE SINGLE PHASE BRIDGE RECTIFIERS

文件：415.68 Kbytes 页数：3 Pages

THINKISEMI

思祁半导体

THINKISEMIS SCHOTTKY TYPE SINGLE PHASE BRIDGE RECTIFIERS

文件：415.68 Kbytes 页数：3 Pages

THINKISEMI

思祁半导体

THINKISEMIS SCHOTTKY TYPE SINGLE PHASE BRIDGE RECTIFIERS

文件：415.68 Kbytes 页数：3 Pages

THINKISEMI

思祁半导体

THINKISEMIS SCHOTTKY TYPE SINGLE PHASE BRIDGE RECTIFIERS

文件：415.68 Kbytes 页数：3 Pages

THINKISEMI

思祁半导体