N-Channel Logic Level Enhancement Mode Field Effect Transistor

Features ● 52A, 30 V. RDS(ON) = 0.0135 Ω @ VGS = 10 V RDS(ON) = 0.020 Ω @ VGS = 4.5 V ● Low gate charge (typical 34 nC). ● Low Crss (typical 175 pF). ● Fast switching speed.

文件：58.6 Kbytes 页数：2 Pages

KEXIN

科信电子

N-MOSFETs

Kexin

科信电子

30V N-Channel Power Trench MOSFET

Features ● 12 A, 30 V. RDS(ON) = 14.5mΩ @ VGS = 10 V RDS(ON) = 21mΩ @ VGS = 4.5 V ● Low gate charge ● Fast switching speed ● High performance trench technology for extremely low RDS(ON)

文件：69.32 Kbytes 页数：2 Pages

KEXIN

科信电子

BIPOLAR LINEAR INTEGRATED CIRCUIT (FM MPX SYSTEM FOR CAR ETR)

BIPOLAR LINEAR INTEGRATED CIRCUIT FM MPX SYSTEM FOR CAR ETR

文件：218.33 Kbytes 页数：11 Pages

KEC

KEC(Korea Electronics)

BIPOLAR LINEAR INTEGRATED CIRCUIT (FM MPX SYSTEM FOR CAR ETR)

BIPOLAR LINEAR INTEGRATED CIRCUIT FM MPX SYSTEM FOR CAR ETR

文件：218.33 Kbytes 页数：11 Pages

KEC

KEC(Korea Electronics)