丝印：DB-S；SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 200 Volts CURRENT 3.0 Amperes

FEATURES * Good for automation insertion * Ideal for printed circuit board * Reliable low cost construction utilizing molded * Glass passivated device * Polarity symbols molded on body * Mounting position: Any

文件：215.81 Kbytes 页数：6 Pages

RECTRON

丽正国际

Ideally Suited for Automatic Assembly

Features • High current capacity,low VF • Low Power Loss,High Efficiency • Ideally Suited for Automatic Assembly • For Use in Low Voltage Application • Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：1.8172 Mbytes 页数：2 Pages

DYELEC

迪一电子

Ideally Suited for Automatic Assembly

Features • High current capacity,low VF • Low Power Loss,High Efficiency • Ideally Suited for Automatic Assembly • For Use in Low Voltage Application • Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：1.78534 Mbytes 页数：2 Pages

DYELEC

迪一电子

Ideally Suited for Automatic Assembly

Features • High current capacity,low VF • Low Power Loss,High Efficiency • Ideally Suited for Automatic Assembly • For Use in Low Voltage Application • Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：1.78534 Mbytes 页数：2 Pages

DYELEC

迪一电子

N-Channel PowerTrench MOSFET

Features ● rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A ● Qg(tot) = 84nC (Typ.), VGS = 10V ● Low Miller Charge ● Low QRR Body Diode ● UIS Capability (Single Pulse and Repetitive Pulse)

文件：53.34 Kbytes 页数：2 Pages

KEXIN

科信电子

N-Channel PowerTrench MOSFET

Features ● rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 61A ● Qg(tot) = 41nC (Typ.), VGS = 10V ● Low Miller Charge ● Low QRR Body Diode ● UIS Capability (Single Pulse and Repetitive Pulse)

文件：53.27 Kbytes 页数：2 Pages

KEXIN

科信电子

N-Channel PowerTrench MOSFET

Features ● rDS(ON) =24mΩ (Typ.), VGS = 10V, ID =44A ● Qg(tot) = 24nC (Typ.), VGS = 10V ● Low Miller Charge ● Low QRR Body Diode ● UIS Capability (Single Pulse and Repetitive Pulse)

文件：53.42 Kbytes 页数：2 Pages

KEXIN

科信电子

N-Channel PowerTrench MOSFET

Features ● rDS(ON) =32mΩ (Typ.), VGS = 10V, ID =32A ● Qg(tot) = 18.5nC (Typ.), VGS = 10V ● Low Miller Charge ● Low QRR Body Diode ● UIS Capability (Single Pulse and Repetitive Pulse)

文件：53.44 Kbytes 页数：2 Pages

KEXIN

科信电子

P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

Features ● -16 A, -20 V. RDS(on) = 0.08 Ù @ VGS = -4.5 V RDS(on) = 0.11 Ù @ VGS = -2.5 V. ● Critical DC electrical parameters specified at elevated temperature. ● High density cell design for extremely low RDS(on).

文件：51.36 Kbytes 页数：2 Pages

KEXIN

科信电子

N-Channel PowerTrenchTMMOSFET

Features ● 32 A, 60 V. RDS(ON) = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V ● Critical DC electrical parameters specified at elevated temperature. ● Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

文件：58.8 Kbytes 页数：2 Pages

KEXIN

科信电子