P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

Features ● -16 A, -20 V. RDS(on) = 0.08 Ù @ VGS = -4.5 V RDS(on) = 0.11 Ù @ VGS = -2.5 V. ● Critical DC electrical parameters specified at elevated temperature. ● High density cell design for extremely low RDS(on).

文件：51.36 Kbytes 页数：2 Pages

KEXIN

科信电子

14 Stage Ripple-Carry Binary Counter/Divider High-Voltage Silicon-Gate CMOS

文件：326.67 Kbytes 页数：6 Pages

KODENSHI

可天士

14 Stage Ripple-Carry Binary Counter/Divider High-Voltage Silicon-Gate CMOS

文件：326.67 Kbytes 页数：6 Pages

KODENSHI

可天士

14 Stage Ripple-Carry Binary Counter/Divider High-Voltage Silicon-Gate CMOS

文件：326.67 Kbytes 页数：6 Pages

KODENSHI

可天士