SINGLE PHASE 2 . 0 AMP SURFACE MOUN T S C H O T T K Y BRIDGE RECTIFIER

Features • High current capacity,low VF • Low Power Loss,High Efficiency • Ideally Suited for Automatic Assembly • For Use in Low Voltage Application • Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：1.35356 Mbytes 页数：2 Pages

DYELEC

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SINGLE PHASE 2 . 0 AMP SURFACE MOUN T S C H O T T K Y BRIDGE RECTIFIER

Features • High current capacity,low VF • Low Power Loss,High Efficiency • Ideally Suited for Automatic Assembly • For Use in Low Voltage Application • Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：1.35356 Mbytes 页数：2 Pages

DYELEC

迪一电子

Ideally Suited for Automatic Assembly

Features • High current capacity,low VF • Low Power Loss,High Efficiency • Ideally Suited for Automatic Assembly • For Use in Low Voltage Application • Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：1.61037 Mbytes 页数：2 Pages

DYELEC

迪一电子

Ideally Suited for Automatic Assembly

Features • High current capacity,low VF • Low Power Loss,High Efficiency • Ideally Suited for Automatic Assembly • For Use in Low Voltage Application • Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：1.61037 Mbytes 页数：2 Pages

DYELEC

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N-Channel PowerTrench MOSFET

Features ● rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A ● Qg(tot) = 82nC (Typ.), VGS = 10V ● Low Miller Charge ● Low QRR Body Diode ● UIS Capability (Single Pulse and Repetitive Pulse)

文件：52.13 Kbytes 页数：2 Pages

KEXIN

科信电子

N-Channel PowerTrench MOSFET

Features ● rDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 16A ● Qg(tot) = 39nC (Typ.), VGS = 10V ● Low Miller Charge ● Low QRR Body Diode ● UIS Capability (Single Pulse and Repetitive Pulse)

文件：52.05 Kbytes 页数：2 Pages

KEXIN

科信电子

150V N-Channel PowerTrench MOSFET

Features ● 22 A, 150 V. RDS(ON) = 80 mΩ @ VGS = 10 V RDS(ON) = 90 mΩ @ VGS = 6 V ● Low gate charge ● Fast switching speed ● High performance trench technology for extremely low RDS(ON)

文件：51.31 Kbytes 页数：2 Pages

KEXIN

科信电子

N-Channel PowerTrench MOSFET

Features ● rDS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A ● Qg(tot) = 26nC (Typ.), VGS = 10V ● Low Miller Charge ● Low QRR Body Diode ● UIS Capability (Single Pulse and Repetitive Pulse)

文件：53.13 Kbytes 页数：2 Pages

KEXIN

科信电子

200V N-Channel PowerTrench MOSFET

Features ● 19 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V ● Low gate charge (27 nC typical) ● Fast switching speed ● High performance trench technology for extremely low RDS(ON) ● High power and current handling capability

文件：51.21 Kbytes 页数：2 Pages

KEXIN

科信电子

Ideally Suited for Automatic Assembly

Features • High current capacity,low VF • Low Power Loss,High Efficiency • Ideally Suited for Automatic Assembly • For Use in Low Voltage Application • Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：1.8172 Mbytes 页数：2 Pages

DYELEC

迪一电子