KDB2552

N-Channel PowerTrench MOSFET

Features ●rDS(ON)=32mΩ(Typ.),VGS=10V,ID=16A ●Qg(tot)=39nC(Typ.),VGS=10V ●LowMillerCharge ●LowQRRBodyDiode ●UISCapability(SinglePulseandRepetitivePulse)

KDB2570

150V N-Channel PowerTrench MOSFET

Features ●22A,150V.RDS(ON)=80mΩ@VGS=10V RDS(ON)=90mΩ@VGS=6V ●Lowgatecharge ●Fastswitchingspeed ●Highperformancetrenchtechnologyforextremely lowRDS(ON)

KDB2572

N-Channel PowerTrench MOSFET

Features ●rDS(ON)=45mΩ(Typ.),VGS=10V,ID=9A ●Qg(tot)=26nC(Typ.),VGS=10V ●LowMillerCharge ●LowQRRBodyDiode ●UISCapability(SinglePulseandRepetitivePulse)

KDB2670

200V N-Channel PowerTrench MOSFET

Features ●19A,200V.RDS(ON)=130mΩ@VGS=10V ●Lowgatecharge(27nCtypical) ●Fastswitchingspeed ●HighperformancetrenchtechnologyforextremelylowRDS(ON) ●Highpowerandcurrenthandlingcapability

KDB32

Ideally Suited for Automatic Assembly

Features •Highcurrentcapacity,lowVF •LowPowerLoss,HighEfficiency •IdeallySuitedforAutomaticAssembly •ForUseinLowVoltageApplication •PlasticCaseMaterialhasULFlammability ClassificationRating94V-0

KDB3200S

丝印：DB-S；SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 200 Volts CURRENT 3.0 Amperes

FEATURES *Goodforautomationinsertion *Idealforprintedcircuitboard *Reliablelowcostconstructionutilizingmolded *Glasspassivateddevice *Polaritysymbolsmoldedonbody *Mountingposition:Any

KDB325

Ideally Suited for Automatic Assembly

Features •Highcurrentcapacity,lowVF •LowPowerLoss,HighEfficiency •IdeallySuitedforAutomaticAssembly •ForUseinLowVoltageApplication •PlasticCaseMaterialhasULFlammability ClassificationRating94V-0

KDB325S

Ideally Suited for Automatic Assembly

Features •Highcurrentcapacity,lowVF •LowPowerLoss,HighEfficiency •IdeallySuitedforAutomaticAssembly •ForUseinLowVoltageApplication •PlasticCaseMaterialhasULFlammability ClassificationRating94V-0

KDB32S

Ideally Suited for Automatic Assembly

Features •Highcurrentcapacity,lowVF •LowPowerLoss,HighEfficiency •IdeallySuitedforAutomaticAssembly •ForUseinLowVoltageApplication •PlasticCaseMaterialhasULFlammability ClassificationRating94V-0

KDB3632

N-Channel PowerTrench MOSFET

Features ●rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A ●Qg(tot)=84nC(Typ.),VGS=10V ●LowMillerCharge ●LowQRRBodyDiode ●UISCapability(SinglePulseandRepetitivePulse)