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K4S560832J-UC/L75

256Mb J-die SDRAM Specification

GeneralDescription TheK4S560432J/K4S560832J/K4S561632Jis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung Group

三星三星半导体

K4S560832A

256MbitSDRAM8Mx8bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S560832Ais268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x8,392,608wordsby8bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepo

SamsungSamsung Group

三星三星半导体

K4S560832B

256MbitSDRAM8Mx8bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S560832Bis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x8,392,608wordsby8bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepo

SamsungSamsung Group

三星三星半导体

K4S560832C

256MbitSDRAM8Mx8bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S560832Cis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x8,392,608wordsby8bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepos

SamsungSamsung Group

三星三星半导体

K4S560832D

256MbitSDRAM8Mx8bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S560832Dis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x8,392,608wordsby8bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepos

SamsungSamsung Group

三星三星半导体

K4S560832H

SDRAMProductGuide

SamsungSamsung Group

三星三星半导体

K4S560832J

SDRAMProductGuide

SamsungSamsung Group

三星三星半导体

K4S560832J

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung Group

三星三星半导体

K4S560832J

256MbJ-dieSDRAMSpecification

GeneralDescription TheK4S560432J/K4S560832J/K4S561632Jis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung Group

三星三星半导体

K4S560832N

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung Group

三星三星半导体

详细参数

  • 型号:

    K4S560832J-UC

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    256Mb J-die SDRAM Specification

供应商型号品牌批号封装库存备注价格
SAMSUNG
2023+
TSOP54
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
SAMSUNG
21+
TSOP54
35200
一级代理/放心采购
询价
SAMSUNG
22+
TSOP
2789
原装优势!绝对公司现货!
询价
SAMSUNG
2022
TSOP
3268
原厂原装正品,价格超越代理
询价
SAMSUNG
2016+
TSOP
6528
只做进口原装现货!或订货,假一赔十!
询价
SAMSUNG
23+
TSOP-54
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
SAMSUNG
16+
SSOP
100
原装现货假一罚十
询价
SAMSUNG
23+
TSOP-54
5000
原装正品,假一罚十
询价
SAMSUNG
2017+
TSOP54
25689
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
SANSUNG
16+
TSOP
4760
全新原装现货
询价
更多K4S560832J-UC供应商 更新时间2024-5-19 13:30:00