丝印：K4M；Package：SOT-323；TRANSISTOR(PNP)

FEATURES Complementary to MMBT5551W Small Surface Mount Package Ideal for Medium Power Amplificationand Switching

文件：246.96 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：K4M；Package：SOT-363；Dual PNP Small Signal Surface Mount Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary NPN type available MMDT5551. ● Ultra-small surface mount package. APPLICATIONS ● For Low power amplification and switching.

文件：146.66 Kbytes 页数：3 Pages

BILIN

银河微电

丝印：K4M；Package：SOT-363；Epitaxial Planar Die Construction

Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMDT5551) Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3) Green Device (Note 4 and 5)

文件：853.65 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：K4M；Package：SOT-363；SOT-363 Plastic-Encapsulate Transistors

FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available(MMDT 5551) Ideal for Medium Power Amplification and Switching

文件：1.5168 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：K4M；Package：SOT-323；SOT-323 Plastic-Encapsulate Transistors

FEATURES Complementary to MMST5551 Small Surface Mount Package Ideal for Medium Power Amplificationand Switching

文件：1.87635 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：K4M；Package：SOT-323；PNP General Purpose Transistor

FEATURES ● Epitaxial planar die construction. ● Complementary NPN type available (MMST5551). ● Also available in lead free version. APPLICATIONS ● Ideal for medium power amplification and switching.

文件：156.98 Kbytes 页数：3 Pages

BILIN

银河微电

丝印：K4M；Package：SOT-323；PNP Transistors

■ Features ● Small Surface Mount Package ● Ideal for Medium Power Amplificationand Switching ● Complementary to MMST5551

文件：361.56 Kbytes 页数：1 Pages

KEXIN

科信电子

丝印：K4M；Package：S-TOGL；MOSFETs Silicon N-channel MOS

Applications • Automotive • Switching Voltage Regulators • Motor Drivers • DC-DC Converters Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 0.53 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to

文件：803.15 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K4M；Package：SOT-323；SOT-323 Plastic-Encapsulate Transistors

文件：1.57253 Mbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：K4M；Package：SOT-363；150V DUAL PNP SMALL SIGNAL TRANSISTOR

文件：443.01 Kbytes 页数：5 Pages

DIODES

美台半导体