TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

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TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.6Ω(typ.) • High forward transfer admittance: |Yfs| = 2.2 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600V) • Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

文件：261.5 Kbytes 页数：6 Pages

TOSHIBA

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丝印：K4A60DB；TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.6Ω(typ.) • High forward transfer admittance: |Yfs| = 2.2 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600V) • Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

文件：261.5 Kbytes 页数：6 Pages

TOSHIBA

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