TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.6Ω(typ.) • High forward transfer admittance: |Yfs| = 2.2 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600V) • Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

文件：261.5 Kbytes 页数：6 Pages

TOSHIBA

东芝

丝印：K4A60DB；TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.6Ω(typ.) • High forward transfer admittance: |Yfs| = 2.2 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600V) • Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

文件：261.5 Kbytes 页数：6 Pages

TOSHIBA

东芝

Sensitive Gate Triacs

文件：630.45 Kbytes 页数：5 Pages

SEMIWELL

矽门微

Bi-Directional Triode Thyristor

文件：655.53 Kbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Sensitive Gate Triacs

文件：607.66 Kbytes 页数：6 Pages

SEMIWELL

矽门微