K4A60DA

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=1.7Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=2.2S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=600V) •Enhancement-mode:Vth=2.4to4.4V(VDS=10V,ID=1mA)

K4A60DB

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(π-MOSⅦ)

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=1.6Ω(typ.) •Highforwardtransferadmittance:|Yfs|=2.2S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=600V) •Enhancementmode:Vth=2.4to4.4V(VDS=10V,ID=1mA)

STD4A60S

SensitiveGateTriacs

STF4A60

Bi-DirectionalTriodeThyristor

STF4A60S

SensitiveGateTriacs

STP4A60S

SensitiveGateTriacs

STR4A60

Bi-DirectionalTriodeThyristor

STR4A60S

SensitiveGateTriacs

STR4A60S

SensitiveGateTriacs

STU4A60

Bi-DirectionalTriodeThyristor