| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SiliconNPNtransistorinaSOT-23PlasticPackage Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features LowVCE(sat),highcurrent. Applications Generalpurposeswitchingandmuting,LCDback-lighting,supplylineswitchingcircuits. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
50V;3ANPNlowVCEsattransistor 1.Generaldescription NPNlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS5350T-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat •Highcollectorcurrentcapability | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
50V,3ANPNlowVCEsattransistor 1.Generaldescription NPNlowVCEsattransistorinaSOT89plasticpackage. PNPcomplement:PBSS5350X 2.Featuresandbenefits •SOT89(SC-62)package •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Higherefficiencyleadingtolesshea | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
SiliconNPNtransistorinaSOT-89PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
LowVCEsat(BISS)transistors | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
LowVCEsat(BISS)transistors | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
50VlowVCEsatNPNtransistor DESCRIPTION NPNlowVCEsattransistorinaSOT223plasticpackage.PNPcomplement:PBSS5350Z. FEATURES •Lowcollector-emittersaturationvoltage •Highcollectorcurrentcapability:ICandICM •Highcollectorcurrentgain(hFE)athighIC •Higherefficiencyleadingtolessheatgeneration | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
50VlowVCEsatNPNtransistor DESCRIPTION NPNlowVCEsattransistorinaSOT223plasticpackage.PNPcomplement:PBSS5350Z. FEATURES •Lowcollector-emittersaturationvoltage •Highcollectorcurrentcapability:ICandICM •Highcollectorcurrentgain(hFE)athighIC •Higherefficiencyleadingtolessheatgeneration | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
50VlowVCEsatNPNtransistor | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
50VlowVCEsatNPNtransistor 1.Generaldescription NPNlowVCEsattransistorinaSOT223plasticpackage.PNPcomplement:PBSS5350Z. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltage •Highcollectorcurrentcapability:ICandICM •Highcollectorcurrentgain(hFE)athighIC •Higherefficiencyl | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
MHVMaleConnectorCrimp-SolderAttachmentForRG214,RG9 | PASTERNACKPasternack Enterprises, Inc. 帕斯特纳克 | PASTERNACK | ||
MHVMaleConnectorCrimp/SolderAttachment | PASTERNACKPasternack Enterprises, Inc. 帕斯特纳克 | PASTERNACK | ||
MSDPowersportsLaunchMaster | MALLORY Mallory Sonalert Products Inc. | MALLORY | ||
ICsforCommunications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
ICsforCommunications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
SiliconPowerRectifier SiliconPowerRectifier •Softrecovery •GlassPassivatedDie •2500AmpsSurgeRating •Glasstometalsealconstruction •VRRMto1600V | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
RFPowerFieldEffectTransistor 865--960MHz,28WAVG.,28VSINGLEW--CDMALATERALN--CHANNELRFPOWERMOSFET DesignedforCDMAbasestationapplicationswithfrequenciesfrom865to960MHz.CanbeusedinClassABandClassCforalltypicalcellularbasestationmodulationformats. •TypicalSingle--CarrierW--CDMAPerfor | freescaleFreescaleiscreatingasmarter 飞思卡尔 | freescale | ||
RFPowerLDMOSTransistor N--ChannelEnhancement--ModeLateralMOSFET This50wattRFpowerLDMOStransistorisdesignedforcellularbasestation applicationscoveringthefrequencyrangeof1805to1880MHz. TypicalSingle--CarrierW--CDMAPerformance:VDD=28Volts, IDQ=1800mA,Pout=50WattsAvg.,InputSign | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
RFPowerLDMOSTransistor N--ChannelEnhancement--ModeLateralMOSFET This63wattasymmetricalDohertyRFpowerLDMOStransistorisdesigned forcellularbasestationapplicationsrequiringverywideinstantaneous bandwidthcapabilitycoveringthefrequencyrangeof1805to1880MHz. TypicalDohertySingle--Carrier | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
RFLDMOSWidebandIntegratedPowerAmplifiers | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp |
详细参数
- 型号：
K4350PS
- 制造商：
KROY INC
- 功能描述：
Universal Power Supply for K4350 Industrial Printer
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Kroy- Inc. |
2022+ |
1 |
全新原装 货期两周 |
询价 | |||
日立 |
6000 |
面议 |
19 |
TO-92 |
询价 | ||
HITACHI/日立 |
TO-92 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
ANY |
新 |
1000 |
全新原装 货期两周 |
询价 | |||
KEC |
23+ |
NA/ |
4250 |
原装现货,当天可交货,原型号开票 |
询价 | ||
ST |
01+ |
SOP-8 |
2900 |
询价 | |||
INTEL |
2019 |
BGA |
55000 |
真实现货库存 |
询价 | ||
AKM |
23+ |
CBGA |
18000 |
询价 | |||
AKM |
23+ |
SSOP |
5000 |
原装正品,假一罚十 |
询价 | ||
OSRAM/欧司朗 |
2102+ |
NA |
6854 |
只做原厂原装正品假一赔十! |
询价 |
相关规格书
更多- K4350RCPTR
- K4360B1EN1S
- K4360C1EN1S
- K4360D1EN1S
- K4360H1EN1S
- K4360M1EN1S
- K4360N1EN1S
- K4360Q1EN1S
- K4360V1EN1S
- K4360W1EN1S
- K4360X1EN1S
- K4360Y1EN1S
- K4360Z1EN1S
- K-437-2
- K-437-4
- K-437-6
- K438
- K4380B1EN1S
- K4380C1EN1S
- K4380D1EN1S
- K4380H1EN1S
- K4380M1EN1S
- K4380N1EN1S
- K4380Q1EN1S
- K4380V1EN1S
- K4380W1EN1S
- K4380X1EN1S
- K4380Y1EN1S
- K4380Z1EN1S
- K4-38R-W
- K43A-02
- K43A-06
- K43A232
- K43A332
- K43A532
- K43C334
- K43C534
- K43C832
- K43C932
- K43P-15
- K440
- K440BR
- K-441
- K-443
- K44421
相关库存
更多- K4360B1EB1S
- K4360C1EB1S
- K4360D1EB1S
- K4360H1EB1S
- K4360M1EB1S
- K4360N1EB1S
- K4360Q1EB1S
- K4360V1EB1S
- K4360W1EB1S
- K4360X1EB1S
- K4360Y1EB1S
- K4360Z1EB1S
- K-437-187
- K-437-3
- K-437-5
- K-437A
- K4380B1EB1S
- K4380C1EB1S
- K4380D1EB1S
- K4380H1EB1S
- K4380M1EB1S
- K4380N1EB1S
- K4380Q1EB1S
- K4380V1EB1S
- K4380W1EB1S
- K4380X1EB1S
- K4380Y1EB1S
- K4380Z1EB1S
- K-438A
- K43A-01
- K43A-05
- K43A-08
- K43A234
- K43A334
- K43C332
- K43C532
- K43C734
- K43C834
- K43C934
- K43P332
- K4401
- K441
- K-442
- K-444
- K44643-6
