High Performance Key Switches

文件：310.89 Kbytes 页数：6 Pages

ITT

丝印：K12A50W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA)

文件：255.85 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K12A60D；Package：SC-67；Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：192.33 Kbytes 页数：6 Pages

TOSHIBA

东芝

丝印：K12A80W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.38 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V(VDS = 10 V, ID = 0.57 mA)

文件：409.67 Kbytes 页数：10 Pages

TOSHIBA

东芝

按键开关

C&K

高铭

按键开关

C&K

高铭

按键开关

C&K

高铭

包装：袋 类别：开关 按钮开关 描述：SWITCH PUSH SPST-NO 0.1A 30V

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包装：散装 类别：开关 按钮开关 描述：SWITCH PUSH SPST-NO 0.1A 30V

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包装：散装 类别：开关 按钮开关 描述：SWITCH PUSH SPST-NO 0.1A 30V

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