2 x 1.2mm Auto Grade Tuning Fork

文件：283.64 Kbytes 页数：3 Pages

FOX

丝印：K12A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, epetition r ate (duty cycle): 0.01%

文件：1.26024 Mbytes 页数：7 Pages

SY

顺烨电子

Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON)= 0.45 Ω(typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.) • Low leakage current: IDSS= 10 μA (VDS= 500 V) • Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

文件：262.5 Kbytes 页数：6 Pages

TOSHIBA

东芝

Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.) • Low leakage current: IDSS = 10 μA (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：319.18 Kbytes 页数：6 Pages

TOSHIBA

东芝

Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：192.33 Kbytes 页数：6 Pages

TOSHIBA

东芝

Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications • Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.) • High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

文件：187.12 Kbytes 页数：6 Pages

TOSHIBA

东芝

MOSFETs Silicon N-Channel MOS (DTMOS??

Features (1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) Applications • Switching Voltage Regulators

文件：246.65 Kbytes 页数：10 Pages

TOSHIBA

东芝

High Performance Key Switches

文件：310.89 Kbytes 页数：6 Pages

ITT

High Performance Key Switches

文件：310.89 Kbytes 页数：6 Pages

ITT

High Performance Key Switches

文件：310.89 Kbytes 页数：6 Pages

ITT