Dipped Radial Multilayer Ceramic Capacitors for 50 - 100 Vdc

文件：368.78 Kbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

肖特基二极管

TWTLsemi

腾领

肖特基整流二极管

ElecSuper

静芯

丝印：K12A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features ■ For surface mounted applications in order to optimize board space ■ Low profile package ■ Built-in strain relief ■ Glass passivated junction ■ Low inductance ■ Excellent clamping capability ■ 1000W peak pulse power capability at 10/1000μs waveform, repetition rate (duty cycle):

文件：1.26024 Mbytes 页数：7 Pages

SHUNYE

顺烨电子

丝印：K12A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, epetition r ate (duty cycle): 0.01%

文件：1.26024 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：K12C；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features ■ For surface mounted applications in order to optimize board space ■ Low profile package ■ Built-in strain relief ■ Glass passivated junction ■ Low inductance ■ Excellent clamping capability ■ 1000W peak pulse power capability at 10/1000μs waveform, repetition rate (duty cycle):

文件：1.26024 Mbytes 页数：7 Pages

SHUNYE

顺烨电子

丝印：K12C；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features For surface mounted applications in order to optimize board space Low profile package Built in strain relief Glass p assivated j unction Low inductance Excellent clamping capability 1000W peak pulse power capability at 10/1000 μ s waveform, epetition r ate (duty cycle): 0.01%

文件：1.26024 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：K120；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.52868 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：K120MCH7；Package：PG-TO247-3-PLUS-NN3.7；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode

Features • VCE = 1200 V • IC = 120 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed with full rated current, low Qrr and soft-commutating high speed diode • Low saturation voltage VCEsat = 1.7 V at Tvj = 25°C • Optimized for high efficiency in high s

文件：1.69372 Mbytes 页数：17 Pages

INFINEON

英飞凌

丝印：K120MCS7；Package：PG-TO247-3-PLUS-NN3.7；Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features • VCE = 1200 V • IC = 120 A • IGBT co-packed with full current, soft and low Qrr diode • Low saturation voltage VCEsat = 2.0 V at Tvj = 175°C • Optimized for hard switching topologies (2-L inverter, 3-L NPC T-type, ...) • Short circuit ruggedness 8 μs • Wide range of dv/dt controll

文件：1.57433 Mbytes 页数：17 Pages

INFINEON

英飞凌