丝印：K120EEH7；Package：PG-TO247-3-PLUS-NN3.7；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features • VCE = 650 V • IC = 120 A • Low switching losses • Very low collector-emitter saturation voltage VCEsat • Very soft, fast recovery antiparallel diode • Smooth switching behavior • Humidity robustness • Optimized for hard switching, two- and three-level topologies • Complete prod

文件：2.17588 Mbytes 页数：17 Pages

INFINEON

英飞凌

丝印：K120GCP2；Package：PG-TO247-3-PLUS-NN8.5；Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package co-packed with soft and fast recovery diode

Features • VCE = 750 V • IC = 120 A • Low saturation voltage VCEsat = 1.4 V • Low switching losses • Short circuit ruggedness 3 μs • IGBT co-packed with full current, soft and fast recovery diode • Optimized for hard switching topologies up to 10 KHz • Package backside suitable for reflow

文件：1.63441 Mbytes 页数：17 Pages

INFINEON

英飞凌

丝印：K120EEH7；Package：PG-TO247-4-PLUS-NN5.1；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features • VCE = 650 V • IC = 120 A • Low switching losses • Very low collector-emitter saturation voltage VCEsat • Very soft, fast recovery antiparallel diode • Smooth switching behavior • Humidity robustness • Optimized for hard switching, two- and three-level topologies • Complete prod

文件：2.19604 Mbytes 页数：17 Pages

INFINEON

英飞凌

丝印：K120；Package：SOD-123FL；SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

文件：519.27 Kbytes 页数：3 Pages

SHUNYE

顺烨电子

丝印：K120；Package：SOD-123FL；SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

文件：519.27 Kbytes 页数：3 Pages

SHUNYE

顺烨电子

丝印：K120；Package：SOD-123FL；SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

文件：519.25 Kbytes 页数：3 Pages

SY

顺烨电子

丝印：K125A60Z1；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA)

文件：488.95 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：K125E60Z1；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA)

文件：527.47 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：K125N60Z1；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA)

文件：526.23 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：K125U60Z1；Package：TOLL；MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA)

文件：535.52 Kbytes 页数：9 Pages

TOSHIBA

东芝