丝印：K100MCH7；Package：PG-TO247-4-PLUS-NN5.1；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode Features • VCE = 1200 V • IC = 100 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed

文件：1.74533 Mbytes 页数：17 Pages

INFINEON

英飞凌

丝印：K10A50D；Package：SC-67；TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Official Site : http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en • Low drain-source ON-resistance: RDS (ON)= 0.62 Ω(typ.) • High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.) • Low leakage current: IDSS= 10 μA (max) (VDS= 500

文件：205.01 Kbytes 页数：6 Pages

TOSHIBA

东芝

丝印：K10A50W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)

文件：255.59 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K10A60D；Switching Regulator Applications

• Low drain-source ON-resistance: RDS (ON)= 0.58 Ω(typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.) • Low leakage current: IDSS= 10 μA(max)(VDS= 600 V) • Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

文件：164.35 Kbytes 页数：6 Pages

TOSHIBA

东芝

丝印：K10A60W5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 85 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS =

文件：242.38 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K10A80W；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 0.45mA)

文件：416.79 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K10E80W；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 0.45 mA)

文件：425.38 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：K10J80E；Package：TO-3P；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) (2) Low leakage current : IDSS = 10 μA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：230.78 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：K101；Package：SOT-25；INPUT/OUTPUT RAIL TO RAIL LOW POWER OPERATIONAL AMPLIFIERS

Description The TS95x family are rail-to-rail BiCMOS operational amplifiers optimized and fully specified for 3V and 5V operation. The TS951 is housed in the space-saving 5 pins SOT23 package that makes it well suited for battery-powered systems. This micropackage simplifies the PC board design

文件：118.66 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：K10D；Package：SOT23-5；High bandwidth (30 MHz) low offset (200 μV) rail-to-rail 5 V op amp

Features • Gain bandwidth product 30 MHz, unity gain stable • Slew rate 20 V/μs • Low input bias current: 2 pA typ. • Low input voltage noise density 7 nV/√Hz @ 10 kHz • Wide supply voltage range: 2.0 V to 5.5 V • Rail-to-rail input and output • Extended temperature range: -40 °C to +125 °C

文件：8.77229 Mbytes 页数：34 Pages

STMICROELECTRONICS

意法半导体